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BLC6G10LS-160, BLC6G10-160 UHF power LDMOS transistor

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Description

www.DataSheet4U.com BLC6G10-160; BLC6G10LS-160 UHF power LDMOS transistor Rev.01 * 12 May 2006 Objective data sheet 1.Product profile 1.1 G.
160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz.

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This datasheet PDF includes multiple part numbers: BLC6G10LS-160, BLC6G10-160. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
BLC6G10LS-160, BLC6G10-160
Manufacturer
NXP ↗
File Size
79.96 KB
Datasheet
BLC6G10-160_PhilipsSemiconductors.pdf
Description
UHF power LDMOS transistor
Note
This datasheet PDF includes multiple part numbers: BLC6G10LS-160, BLC6G10-160.
Please refer to the document for exact specifications by model.

Features

* I Typical 2-carrier W-CDMA performance at frequencies of 920 MHz and 960 MHz, a supply voltage of 32 V and an IDq of 1200 mA: N Average output power = 32 W N Power gain = 23 dB N Efficiency = 28 % N ACPR =
* 40 dBc I Easy power control I Integrated ESD protection I Excellent ruggedness I High

Applications

* at frequencies from 800 MHz to 1000 MHz. Table 1: Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 920 to 960 VDS (V) 32 PL(AV) (W) 32 Gp (dB) 23 ηD (%) 28 ACPR (dBc)
* 40[1] Test signal: 3

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