BLC6G10LS-160, BLC6G10-160 Datasheet - NXP

BLC6G10LS-160 UHF power LDMOS transistor

160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1: Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 920 to 960 VDS (V) 32 PL(AV) (W) 32 Gp (d.

BLC6G10LS-160 Features

* I Typical 2-carrier W-CDMA performance at frequencies of 920 MHz and 960 MHz, a supply voltage of 32 V and an IDq of 1200 mA: N Average output power = 32 W N Power gain = 23 dB N Efﬁciency = 28 % N ACPR =

* 40 dBc I Easy power control I Integrated ESD protection I Excellent ruggedness I High

BLC6G10-160_PhilipsSemiconductors.pdf