BLC6G10-200_PhilipsSemiconductors.pdf
Datasheet Details
Part number:
BLC6G10LS-200, BLC6G10-200
Manufacturer:
File Size:
89.95 KB
Description:
Uhf power ldmos transistor.
Note:
This datasheet PDF includes multiple part numbers: BLC6G10LS-200, BLC6G10-200.
Please refer to the document for exact specifications by model.
BLC6G10LS-200, BLC6G10-200, UHF power LDMOS transistor
200 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz.
Table 1: Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.
Mode of operation 2-carrier W-CDMA [1] f (MHz) 869 to 894 VDS (V) 28 PL(AV) (W) 40 Gp (d
BLC6G10LS-200 Features
* I Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a supply voltage of 28 V and an IDq of 1400 mA: N Average output power = 40 W N Power gain = 20 dB N Efficiency = 27 % N ACPR =
* 39 dBc I Easy power control I Integrated ESD protection I Excellent ruggedness I High
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