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BLC6G10LS-200, BLC6G10-200 - UHF power LDMOS transistor

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This datasheet PDF includes multiple part numbers: BLC6G10LS-200, BLC6G10-200. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number BLC6G10LS-200, BLC6G10-200
Manufacturer NXP
File Size 89.95 KB
Description UHF power LDMOS transistor
Datasheet download datasheet BLC6G10-200_PhilipsSemiconductors.pdf
Note This datasheet PDF includes multiple part numbers: BLC6G10LS-200, BLC6G10-200.
Please refer to the document for exact specifications by model.

BLC6G10LS-200 Product details

Description

200 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. 39[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz.CAUTION This device is sensitive

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