BLC6G10LS-200, BLC6G10-200 UHF power LDMOS transistor

NXP

Description

www.DataSheet4U.com BLC6G10-200; BLC6G10LS-200 UHF power LDMOS transistor Rev.01 * 19 April 2006 Objective data sheet 1.Product proﬁle 1.1.
200 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz.

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BLC6G10LS-200 Datasheet Preview — This datasheet PDF includes multiple part numbers: BLC6G10LS-200, BLC6G10-200. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: BLC6G10LS-200, BLC6G10-200
Manufacturer: NXP ↗
File Size: 89.95 KB
Datasheet: BLC6G10-200_PhilipsSemiconductors.pdf
Description: UHF power LDMOS transistor
Note: This datasheet PDF includes multiple part numbers: BLC6G10LS-200, BLC6G10-200.
Please refer to the document for exact specifications by model.

Features

* I Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a supply voltage of 28 V and an IDq of 1400 mA: N Average output power = 40 W N Power gain = 20 dB N Efﬁciency = 27 % N ACPR =
* 39 dBc I Easy power control I Integrated ESD protection I Excellent ruggedness I High

Applications

* at frequencies from 800 MHz to 1000 MHz. Table 1: Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 869 to 894 VDS (V) 28 PL(AV) (W) 40 Gp (dB) 20 ηD (%) 27 ACPR (dBc)
* 39[1] Test signal: 3

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BLC6G10-200 UHF power LDMOS transistor NXP

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