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BLF10H6600P - Power LDMOS transistor

NXP

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Datasheet Details

Part number	BLF10H6600P
Manufacturer	NXP ↗
File Size	229.95 KB
Description	Power LDMOS transistor
Datasheet	BLF10H6600P-NXP.pdf

BLF10H6600P Product details

Description

A 600 W LDMOS RF power transistor for transmitter applications and industrial applications.

Features

Excellent ruggedness (VSWR  40 : 1 through all phases).
Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W.
High power gain.
High efficiency.
Designed for broadband operation (400 MHz to 1000 MHz).
Internal input matching for high gain and optimum broadband operation.
Excellent reliability.
Easy power control.
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

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Published: Jan 27, 2016 |