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BLF10H6600P

Power LDMOS transistor

BLF10H6600P Features

* Excellent ruggedness (VSWR  40 : 1 through all phases)

* Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W

* High power gain

* High efficiency

* Designed for broadband operation (400 MHz to 1000 MHz)

* Internal input matching for high gain and optimum broadband

BLF10H6600P General Description

A 600 W LDMOS RF power transistor for transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Table 1. Application information Test signal f (MHz) PL(AV) (W) PL(M) (W) Gp D IMD3 (dB) (%) (dBc.

BLF10H6600P Datasheet (229.95 KB)

Preview of BLF10H6600P PDF

Datasheet Details

Part number:

BLF10H6600P

Manufacturer:

NXP ↗

File Size:

229.95 KB

Description:

Power ldmos transistor.

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BLF10H6600P Power LDMOS transistor NXP

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