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BLF10M6200 Power LDMOS transistor

BLF10M6200 Description

BLF10M6200; BLF10M6LS200 Power LDMOS transistor Rev.1 * 1 July 2013 Product data sheet 1.Product profile 1.1 General .
200 W LDMOS power transistor for ISM applications at frequencies from 700 MHz to 1000 MHz.

BLF10M6200 Features

* Easy power control
* Integrated ESD protection
* Excellent ruggedness
* High efficiency
* Excellent thermal stability
* Designed for broadband operation (700 MHz to 1000 MHz)
* Internally matched for ease of use
* Compliant to Directive 2002/95/EC, regarding restric

BLF10M6200 Applications

* at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f VDS PL(AV) Gp D ACPR (MHz) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 869 to 894 28 40 20 28.5 39[1] [1] Tes

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Datasheet Details

Part number
BLF10M6200
Manufacturer
NXP ↗
File Size
135.98 KB
Datasheet
BLF10M6200-NXP.pdf
Description
Power LDMOS transistor

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