BLP8G20S-80P Power LDMOS transistor

NXP

Description

BLP8G20S-80P Power LDMOS transistor Rev.2 * 13 October 2014 Product data sheet 1.Product profile 1.1 General .
80 W LDMOS transistor for base station applications at frequencies from 1800 MHz to 2200 MHz.

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Datasheet Specifications

Part number: BLP8G20S-80P
Manufacturer: NXP ↗
File Size: 126.40 KB
Datasheet: BLP8G20S-80P-NXP.pdf
Description: Power LDMOS transistor

Features

* Designed for broadband operation (1800 MHz to 2200 MHz) Excellent ruggedness High efficiency Excellent thermal stability Internally matched for ease of use High power gain Integrated ESD protection Compliant to Directive 2002/95/EC, regarding Restricti

Applications

* at frequencies from 1800 MHz to 2200 MHz. Table 1. Typical performance Typical RF performance per section at Tcase = 25 C in a common Doherty demo board. Test signal 2-carrier W-CDMA f (MHz) 1805 to 1880 1880 to 1920 2110 to 2170 [1] IDq (mA) 300 300 300 VDS (V) 28 28 28 PL(AV) (W) 14.2 14.2 14.

BLP8G20S-80P Distributors

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BLP8G20S-80P Power LDMOS transistor NXP

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