Description
BLS7G2730L-200P; BLS7G2730LS-200P LDMOS S-band radar power transistor Rev.3 * 12 July 2013 Product data sheet 1.Product profile 1.1 Gener.
200 W LDMOS power transistor for S-band radar applications in the frequency range from 2700 MHz to 3000 MHz.
Features
* High efficiency
* Excellent ruggedness
* Designed for broadband operation
* Excellent thermal stability
* Easy power control
* Integrated ESD protection
* High flexibility with respect to pulse formats
* Internally matched for ease of use
* Compliant to Directiv
Applications
* in the frequency range from 2700 MHz to 3000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C. Test signal
f
VDS
(GHz)
(V)
Class-AB production test circuit
pulsed RF [1]
2.7 to 3.0
32
Application circuit
pulsed RF [2]
2.7 to 3.0
32
pulsed RF [3]
2.9 to 3.1
3
