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BLS7G2730LS-200P, BLS7G2730L-200P - LDMOS S-band radar power transistor

NXP

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BLS7G2730LS-200P Datasheet Preview — This datasheet PDF includes multiple part numbers: BLS7G2730LS-200P, BLS7G2730L-200P. Please refer to the document for exact specifications by model.

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Datasheet Details

Part number	BLS7G2730LS-200P, BLS7G2730L-200P
Manufacturer	NXP ↗
File Size	177.01 KB
Description	LDMOS S-band radar power transistor
Datasheet	BLS7G2730L-200P-NXP.pdf
Note	This datasheet PDF includes multiple part numbers: BLS7G2730LS-200P, BLS7G2730L-200P. Please refer to the document for exact specifications by model.

BLS7G2730LS-200P Product details

Description

200 W LDMOS power transistor for S-band radar applications in the frequency range from 2700 MHz to 3000 MHz.

Features

High efficiency.
Excellent ruggedness.
Designed for broadband operation.
Excellent thermal stability.
Easy power control.
Integrated ESD protection.
High flexibility with respect to pulse formats.
Internally matched for ease of use.
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

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Published: Mar 7, 2016 |