Datasheet Details
Part number:
BLS7G2730LS-200P, BLS7G2730L-200P
Manufacturer:
File Size:
177.01 KB
Description:
Ldmos s-band radar power transistor.
Note:
This datasheet PDF includes multiple part numbers: BLS7G2730LS-200P, BLS7G2730L-200P.
Please refer to the document for exact specifications by model.
BLS7G2730LS-200P, BLS7G2730L-200P, LDMOS S-band radar power transistor
200 W LDMOS power transistor for S-band radar applications in the frequency range from 2700 MHz to 3000 MHz.
Table 1.
Typical performance Typical RF performance at Tcase = 25 C.
Test signal f VDS (GHz) (V) Class-AB production test circuit pulsed RF [1] 2.7 to 3.0 32 Application circuit
BLS7G2730LS-200P Features
* High efficiency
* Excellent ruggedness
* Designed for broadband operation
* Excellent thermal stability
* Easy power control
* Integrated ESD protection
* High flexibility with respect to pulse formats
* Internally matched for ease of use
* Compliant to Directiv
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