Datasheet Specifications
- Part number
- BLS7G2933S-150
- Manufacturer
- NXP ↗
- File Size
- 107.45 KB
- Datasheet
- BLS7G2933S-150-NXP.pdf
- Description
- LDMOS S-band radar power transistor
Description
BLS7G2933S-150 LDMOS S-band radar power transistor Rev.2 * 23 February 2011 Product data sheet 1.Product profile 1.1 General .
Features
* Typical pulsed RF performance at a frequency of 2.9 GHz to 3.3 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of 300 μs with δ of 10 %: Output power = 150 W Power gain = 13.5 dB Efficiency = 47 %Applications
* in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 °C; tp = 300 μs; δ = 10 %; IDq = 100 mA; in a class-AB production test circuit. Mode of operation f (GHz) VDS PL (V) (W) Gp ηD (dB) (%) tr (ns) tf (ns) pulsed RF 2.9 to 3.3 32 150 13.5 47 20BLS7G2933S-150 Distributors
📁 Related Datasheet
📌 All Tags