BLS7G2933S-150 Datasheet, Transistor, NXP

✔ BLS7G2933S-150 Features

Typical pulsed RF performance at a frequency of 2.9 GHz to 3.3 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of 300 μs with δ of 10 %: Output power = 150 W

✔ BLS7G2933S-150 Application

in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 °C; tp =

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Ldmos s-band radar power transistor. 150 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance Typical R

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RF MOSFET LDMOS 32V CDFM2

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BLS7G2933S-150 LDMOS S-band radar power transistor NXP