BLS7G3135L-350P LDMOS S-band radar power transistor

NXP

Description

BLS7G3135L-350P; BLS7G3135LS-350P LDMOS S-band radar power transistor Rev.3 * 29 October 2013 Product data sheet 1.Product profile 1.1 Ge.
350 W LDMOS power transistor intended for radar applications in the 3.

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Datasheet Specifications

Part number: BLS7G3135L-350P
Manufacturer: NXP ↗
File Size: 147.77 KB
Datasheet: BLS7G3135L-350P-NXP.pdf
Description: LDMOS S-band radar power transistor

Features

* Easy power control
* Integrated ESD protection
* High flexibility with respect to pulse formats
* Excellent ruggedness
* High efficiency
* Excellent thermal stability
* Designed for broadband operation (3.1 GHz to 3.5 GHz)
* Internally matched for ease of use

Applications

* in the 3.1 GHz to 3.5 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 200 mA; in a class-AB production test circuit. Test signal f (GHz) VDS PL Gp D (V) (W) (dB) (%) tr tf (ns) (ns) pulsed RF 3.1 32 350 12 43 5 5 3.3 32

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BLS7G3135L-350P LDMOS S-band radar power transistor NXP

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