BSH112 N-channel enhancement mode field-effect transistor

NXP

Description

BSH112 N-channel enhancement mode ﬁeld-effect transistor Rev.01 * 25 August 2000 M3D088 Product speciﬁcation 1..
N-channel enhancement mode ﬁeld-effect transistor in a plastic package using TrenchMOS™1 technology.

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Datasheet Specifications

Part number: BSH112
Manufacturer: NXP ↗
File Size: 290.24 KB
Datasheet: BSH112_PhilipsSemiconductors.pdf
Description: N-channel enhancement mode field-effect transistor

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BSH112 N-channel enhancement mode field-effect transistor NXP

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