BSH301

Dual N-channel enhancement mode MOS transistor

NXP

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Datasheet Details

Part number:

BSH301

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NXP ↗

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36.18 KB

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Description:

Dual n-channel enhancement mode mos transistor.
DISCRETE SEMICONDUCTORS DATA SHEET BSH301 Dual N-channel enhancement mode MOS transistor Objective.
Two N-channel enhancement mode MOS transistors in an 8-pin plastic TSSOP8 package. PINNING SOT530 (T.

✔ BSH301 Features

40 mΩ on-state resistance at 2.5 V gate drive
RDSon rating down to 1.8 V
ESD gate protection. APPLICATIONS
Li-Ion safety switch
Power management. DESCRIPTION Tw

✔ BSH301 Application

Li-Ion safety switch
Power management. DESCRIPTION Two N-channel enhancement mode MOS transistors in an

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BSH301 Dual N-channel enhancement mode MOS transistor NXP

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