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BSH301 Dual N-channel enhancement mode MOS transistor

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Description

DISCRETE SEMICONDUCTORS DATA SHEET BSH301 Dual N-channel enhancement mode MOS transistor Objective specification 1999 Apr 06 Philips Semiconductors .
Two N-channel enhancement mode MOS transistors in an 8-pin plastic TSSOP8 package.

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Features

* 40 mΩ on-state resistance at 2.5 V gate drive
* RDSon rating down to 1.8 V

Applications

* Li-Ion safety switch

BSH301 Distributors

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