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BU1706AB Silicon Diffused Power Transistor

BU1706AB Description

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1706AB GENERAL .
High-voltage, high-speed switching npn transistor in a plastic envelope suitable for surface mounting, intended for use in high frequency electronic l.

BU1706AB Applications

* QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Fall

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Silicon Diffused Power Transistor NXP
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