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BU1706AX Silicon Diffused Power Transistor

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Description

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1706AX GENERAL .
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in high frequ.

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Applications

* QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Fall

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