BU4508AF Silicon Diffused Power Transistor

NXP

Description

DISCRETE SEMICONDUCTORS DATA SHEET BU4508AF Silicon Diffused Power Transistor Product speciﬁcation Supersedes data of January 1998 File under Discre.
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal.

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Datasheet Specifications

Part number: BU4508AF
Manufacturer: NXP ↗
File Size: 92.31 KB
Datasheet: BU4508AF_PhilipsSemiconductors.pdf
Description: Silicon Diffused Power Transistor

Features

* exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Co

Applications

* These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to full

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BU4508AF Silicon Diffused Power Transistor NXP

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