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BUK101-50GS - PowerMOS transistor TOPFET

BUK101-50GS Description

Philips Semiconductors Product specification PowerMOS transistor TOPFET .
Monolithic temperature and overload protected power MOSFET in a 3 pin plastic envelope, intended as a general purpose switch for automotive systems an.

BUK101-50GS Features

* Vertical power DMOS output stage Low on-state resistance Overload protection against over temperature Overload protection against short circuit load Latched overload protection reset by input 10 V input level Low threshold voltage also allows 5 V control Control of power MOSFET and supply of overloa

BUK101-50GS Applications

* BUK101-50GS QUICK REFERENCE DATA SYMBOL VDS ID PD Tj RDS(ON) PARAMETER Continuous drain source voltage Continuous drain current Total power dissipation Continuous junction temperature Drain-source on-state resistance VIS = 10 V MAX. 50 29 75 150 50 UNIT V A W ˚C mΩ APPLICATIONS General controlle

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PowerMOS transistor TOPFET NXP
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