BUK108-50GS Power MOSFET

NXP

Description

Philips Semiconductors Product specification PowerMOS transistor TOPFET .
Monolithic temperature and overload protected power MOSFET in a 3 pin plastic surface mount envelope, intended as a general purpose switch for automot.

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Datasheet Specifications

Part number: BUK108-50GS
Manufacturer: NXP ↗
File Size: 116.98 KB
Datasheet: BUK108-50GS_PhilipsSemiconductors.pdf
Description: Power MOSFET

Features

* Vertical power DMOS output stage Low on-state resistance Overload protection against over temperature Overload protection against short circuit load Latched overload protection reset by input 10 V input level Low threshold voltage also allows 5 V control Control of power MOSFET and supply of overloa

Applications

* BUK108-50GS QUICK REFERENCE DATA SYMBOL VDS ID PD Tj RDS(ON) PARAMETER Continuous drain source voltage Continuous drain current Total power dissipation Continuous junction temperature Drain-source on-state resistance VIS = 10 V MAX. 50 15 40 150 100 UNIT V A W ˚C mΩ APPLICATIONS General controll

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BUK108-50GS Power MOSFET NXP

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