BUK543-60B Datasheet - NXP

BUK543-60B, PowerMOS transistor

Philips Semiconductors Product Specification PowerMOS transistor Logic level FET GENERAL .
N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope.

Applications

* BUK543-60A/B QUICK REFERENCE DATA SYMBOL VDS ID Ptot RDS(ON) PARAMETER BUK543 Drain-source voltage Drain current (DC) Total power dissipation Drain-source on-state resistance; VGS 5 V MAX. -60A 60 13 25 0.085 MAX. -60B 60 12 25 0.1 UNIT V A W Ω PINNING - SOT186 PIN 1 2 3 gate drain source DESCRI

BUK543-60B_PhilipsSemiconductors.pdf