BUK581-100A Datasheet - NXP

BUK581-100A, PowerMOS transistor Logic level FET

Philips Semiconductors Product Specification PowerMOS transistor Logic level FET GENERAL .
N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount applications.

Applications

* The device is intended for use in automotive and general purpose switching applications. BUK581-100A QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance; VGS = 5 V MAX. 1

BUK581-100A_PhilipsSemiconductors.pdf