BUK582-100A PowerMOS transistor Logic level FET

NXP

Description

Philips Semiconductors Product Specification PowerMOS transistor Logic level FET GENERAL .
N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount applications.

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Datasheet Specifications

Part number: BUK582-100A
Manufacturer: NXP ↗
File Size: 55.12 KB
Datasheet: BUK582-100A_PhilipsSemiconductors.pdf
Description: PowerMOS transistor Logic level FET

Applications

* The device is intended for use in automotive and general purpose switching applications. BUK582-100A QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance; VGS = 5 V MAX. 1

BUK582-100A Distributors

📁 Related Datasheet

BUK555-100A BUK555-100B BUK118-50DL BUK127-50GT BUK138-50DL BUK139-50DL

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BUK582-100A PowerMOS transistor Logic level FET NXP

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