LTE21009R Datasheet - NXP

LTE21009R NPN microwave power transistor

1 c APPLICATIONS * Common emitter class-A linear power amplifiers up to 4.2 GHz. 3 b e MAM131 DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange. 2 Top view Marking code: 435 Fig.1 Simp.

LTE21009R Features

* Diffused emitter ballasting resistors

* Self-aligned process entirely ion implanted and gold sandwich metallization

* optimum temperature profile

* excellent performance and reliability

* Input matching cell improves input impedance and facilitates the desig

LTE21009R_PhilipsSemiconductors.pdf