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LTE21009R NPN microwave power transistor

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Description

DISCRETE SEMICONDUCTORS DATA SHEET LTE21009R NPN microwave power transistor Product speciļ¬cation Supersedes data of November 1994 1997 Feb 19 Phili.
1 c APPLICATIONS. Common emitter class-A linear power amplifiers up to 4.

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Features

* Diffused emitter ballasting resistors
* Self-aligned process entirely ion implanted and gold sandwich metallization
* optimum temperature profile
* excellent performance and reliability
* Input matching cell improves input impedance and facilitates the desig

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NPN microwave power transistor NXP
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