LTE21009R

NPN microwave power transistor

NXP

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LTE21009R

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NXP ↗

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Description:

Npn microwave power transistor.
DISCRETE SEMICONDUCTORS DATA SHEET LTE21009R NPN microwave power transistor Product speciﬁcation S.
1 c APPLICATIONS * Common emitter class-A linear power amplifiers up to 4.2 GHz. 3 b e MAM131 DE.

✔ LTE21009R Features

Diffused emitter ballasting resistors
Self-aligned process entirely ion implanted and gold sandwich metallization
optimum temperature profile
excellent performanc

✔ LTE21009R Application

Common emitter class-A linear power amplifiers up to 4.2 GHz. 3 b e MAM131 DESCRIPTION NPN silicon plana

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LTE21009R NPN microwave power transistor NXP

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