LTE21025R Datasheet - NXP

LTE21025R NPN microwave power transistor

1 c APPLICATIONS * Common emitter class-A linear power amplifiers up to 4.2 GHz. 3 b DESCRIPTION 2 MAM131 e NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange. Top view Marking code: 439 Fig.1 Sim.

LTE21025R Features

* Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR

* Self-aligned process entirely ion implanted

* Gold metallization realizes very stable characteristics and excellent lifetime

* Input matching cell improves input i

LTE21025R_PhilipsSemiconductors.pdf