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LTE21025R NPN microwave power transistor

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Description

DISCRETE SEMICONDUCTORS DATA SHEET LTE21025R NPN microwave power transistor Product speciļ¬cation Supersedes data of June 1992 1997 Feb 21 Philips S.
1 c APPLICATIONS. Common emitter class-A linear power amplifiers up to 4.

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Features

* Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR
* Self-aligned process entirely ion implanted
* Gold metallization realizes very stable characteristics and excellent lifetime
* Input matching cell improves input i

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NPN microwave power transistor NXP
NXP LTE21025R-like datasheet