LTE42008R

NPN microwave power transistor

NXP

LTE42008R Features

* Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR

* Gold metallization realizes very stable characteristics and excellent lifetime

* Input matching cell improves input impedance and allows an easier design of circuits. APPL

LTE42008R General Description

emitter connected to ﬂange olumns 1 c b DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange. 2 Top view 3 MAM131 e Marking code: 196 Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA .

LTE42008R Datasheet (78.20 KB)

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Datasheet Details

Part number:

LTE42008R

Manufacturer:

NXP ↗

File Size:

78.20 KB

Description:

Npn microwave power transistor.
DISCRETE SEMICONDUCTORS DATA SHEET LTE42008R NPN microwave power transistor Product speciﬁcation Supersedes data of June 1992 File under Discrete Se.

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LTE42008R NPN microwave power transistor NXP

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LTE42008R Features

LTE42008R General Description

Datasheet Details

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