LTE42008R NPN microwave power transistor

NXP

Description

DISCRETE SEMICONDUCTORS DATA SHEET LTE42008R NPN microwave power transistor Product speciﬁcation Supersedes data of June 1992 File under Discrete Se.
emitter connected to ﬂange olumns 1 c b DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange pac.

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Datasheet Specifications

Part number: LTE42008R
Manufacturer: NXP ↗
File Size: 78.20 KB
Datasheet: LTE42008R_PhilipsSemiconductors.pdf
Description: NPN microwave power transistor

Features

* Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR
* Gold metallization realizes very stable characteristics and excellent lifetime
* Input matching cell improves input impedance and allows an easier design of circuits. APPL

LTE42008R Distributors

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LTE42008R NPN microwave power transistor NXP

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