LTE42008R - NPN microwave power transistor

NXP

LTE42008R Datasheet Preview — Preview of LTE42008R PDF

Datasheet Details

Part number	LTE42008R
Manufacturer	NXP ↗
File Size	78.20 KB
Description	NPN microwave power transistor
Datasheet	LTE42008R_PhilipsSemiconductors.pdf

LTE42008R Product details

Description

emitter connected to ﬂange olumns 1 c b DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange.2 Top view 3 MAM131 e Marking code: 196 Fig.1 Simplified outline and symbol.QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common emitter class-A ampliﬁer.MODE OF OPERATION Class-A (CW) linear f (GHz) 4.2 VCE (V) 16 IC (mA) 250 WARNING Product and environmental safety - toxic

Features

Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR.
Gold metallization realizes very stable characteristics and excellent lifetime.
Input matching cell improves input impedance and allows an easier design of circuits.

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Published: Mar 27, 2005 |