LTE42008R Datasheet (NXP) - NPN microwave power transistor

LTE42008R, NPN microwave power transistor

emitter connected to ﬂange olumns 1 c b DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange.

2 Top view 3 MAM131 e Marking code: 196 Fig.1 Simplified outline and symbol.

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LTE42008R Features

* Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR

* Gold metallization realizes very stable characteristics and excellent lifetime

* Input matching cell improves input impedance and allows an easier design of circuits. APPL