LTE42008R Datasheet, Transistor, NXP

LTE42008R Features

  • Transistor
  • Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR
  • Gold metallization realizes very stable characteristics and exce

PDF File Details

Part number:

LTE42008R

Manufacturer:

NXP ↗

File Size:

78.20kb

Download:

📄 Datasheet

Description:

Npn microwave power transistor. emitter connected to flange olumns 1 c b DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT440A metal c

Datasheet Preview: LTE42008R 📥 Download PDF (78.20kb)
Page 2 of LTE42008R Page 3 of LTE42008R

TAGS

LTE42008R
NPN
microwave
power
transistor
NXP

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