LTE42005S Datasheet - NXP

LTE42005S NPN microwave power transistor

NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange. 2 Top view columns LTE42005S PINNING - SOT440A PIN 1 2 3 collector base emitter connected to ﬂange DESCRIPTION 1 c b 3 MAM131 e Marking code: 502 Fig.1 Si.

LTE42005S Features

* Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR

* Gold metallization realizes very stable characteristics and excellent lifetime

* Input matching cell improves input impedance and allows an easier design of circuits APPLI

LTE42005S Datasheet (52.91 KB)