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LTE42005S

NPN microwave power transistor

LTE42005S Features

* Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR

* Gold metallization realizes very stable characteristics and excellent lifetime

* Input matching cell improves input impedance and allows an easier design of circuits APPLI

LTE42005S General Description

NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange. 2 Top view columns LTE42005S PINNING - SOT440A PIN 1 2 3 collector base emitter connected to flange DESCRIPTION 1 c b 3 MAM131 e Marking code: 502 Fig.1 Si.

LTE42005S Datasheet (52.91 KB)

Preview of LTE42005S PDF

Datasheet Details

Part number:

LTE42005S

Manufacturer:

NXP ↗

File Size:

52.91 KB

Description:

Npn microwave power transistor.
DISCRETE SEMICONDUCTORS DATA SHEET LTE42005S NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 21 Philips S.

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LTE42005S NPN microwave power transistor NXP

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