LTE42005S NPN microwave power transistor

NXP

Description

DISCRETE SEMICONDUCTORS DATA SHEET LTE42005S NPN microwave power transistor Product speciﬁcation Supersedes data of June 1992 1997 Feb 21 Philips S.
NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange.

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Datasheet Specifications

Part number: LTE42005S
Manufacturer: NXP ↗
File Size: 52.91 KB
Datasheet: LTE42005S_PhilipsSemiconductors.pdf
Description: NPN microwave power transistor

Features

* Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR
* Gold metallization realizes very stable characteristics and excellent lifetime
* Input matching cell improves input impedance and allows an easier design of circuits APPLI

Applications

* These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to ful

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LTE42005S NPN microwave power transistor NXP

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