LTE42012R Datasheet, Transistor, NXP

LTE42012R Features

• Transistor
• Interdigitated structure provides high emitter efficiency
• Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR
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PDF File Details

Part number:

LTE42012R

Manufacturer:

NXP ↗

File Size:

72.90kb

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📄 Datasheet

Description:

Npn microwave power transistor. NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the f

LTE42012R Application

• Applications
• Common emitter class-A power amplifiers up to 4.2 GHz in CW conditions for military and professional applications. DESCRIPTIO

TAGS

LTE42012R

NXP

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