Part number:
LTE42012R
Manufacturer:
File Size:
72.90 KB
Description:
Npn microwave power transistor.
LTE42012R_PhilipsSemiconductors.pdf
Datasheet Details
Part number:
LTE42012R
Manufacturer:
File Size:
72.90 KB
Description:
Npn microwave power transistor.
LTE42012R, NPN microwave power transistor
NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange.
Marking code: 198 3 2 Top view olumns LTE42012R PINNING - SOT440A PIN 1 2 3 collector base emitter connected to flange DESCRIPTION 1 c b e MAM131 Fig.1 Simp
LTE42012R Features
* Interdigitated structure provides high emitter efficiency
* Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR
* Gold metallization realizes very stable characteristics and excellent lifetime
* Multicell geometry giv
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