LTE42012R

NPN microwave power transistor

NXP

LTE42012R Features

* Interdigitated structure provides high emitter efficiency

* Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR

* Gold metallization realizes very stable characteristics and excellent lifetime

* Multicell geometry giv

LTE42012R General Description

NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange. Marking code: 198 3 2 Top view olumns LTE42012R PINNING - SOT440A PIN 1 2 3 collector base emitter connected to ﬂange DESCRIPTION 1 c b e MAM131 Fig.1 Simp.

LTE42012R Datasheet (72.90 KB)

LTE42012R Datasheet Preview — Preview of LTE42012R PDF

Datasheet Details

Part number:

LTE42012R

Manufacturer:

NXP ↗

File Size:

72.90 KB

Description:

Npn microwave power transistor.
DISCRETE SEMICONDUCTORS DATA SHEET LTE42012R NPN microwave power transistor Product speciﬁcation Supersedes data of June 1992 1997 Feb 21 Philips S.

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LTE42012R NPN microwave power transistor NXP

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LTE42012R Features

LTE42012R General Description

Datasheet Details

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