LTE42012R NPN microwave power transistor

NXP

Description

DISCRETE SEMICONDUCTORS DATA SHEET LTE42012R NPN microwave power transistor Product speciﬁcation Supersedes data of June 1992 1997 Feb 21 Philips S.
NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange.

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Datasheet Specifications

Part number: LTE42012R
Manufacturer: NXP ↗
File Size: 72.90 KB
Datasheet: LTE42012R_PhilipsSemiconductors.pdf
Description: NPN microwave power transistor

Features

* Interdigitated structure provides high emitter efficiency
* Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR
* Gold metallization realizes very stable characteristics and excellent lifetime
* Multicell geometry giv

LTE42012R Distributors

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LTE42012R NPN microwave power transistor NXP

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