LTE42012R Datasheet (NXP) - NPN microwave power transistor

LTE42012R, NPN microwave power transistor

NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange.

Marking code: 198 3 2 Top view olumns LTE42012R PINNING - SOT440A PIN 1 2 3 collector base emitter connected to ﬂange DESCRIPTION 1 c b e MAM131 Fig.1 Simp

LTE42012R Features

* Interdigitated structure provides high emitter efficiency

* Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR

* Gold metallization realizes very stable characteristics and excellent lifetime

* Multicell geometry giv