LTE21015R Datasheet - NXP

LTE21015R NPN microwave power transistor

1 c b e MAM131 DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange. Top view Marking code: 436 Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C .

LTE21015R Features

* Interdigitated structure provides high emitter efficiency

* Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR

* Gold metallization realizes very stable characteristics and excellent lifetime

* Multicell geometry giv

LTE21015R_PhilipsSemiconductors.pdf