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LTE21015R NPN microwave power transistor

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Description

DISCRETE SEMICONDUCTORS DATA SHEET LTE21015R NPN microwave power transistor Product speciļ¬cation Supersedes data of June 1992 File under Discrete Se.
1 c b e MAM131 DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter conn.

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Features

* Interdigitated structure provides high emitter efficiency
* Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR
* Gold metallization realizes very stable characteristics and excellent lifetime
* Multicell geometry giv

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NPN microwave power transistor NXP
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