* Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation AEC-Q101 qualified Smaller required Printed-Ci
PBSS4041NX Datasheet (228.42 KB)
PBSS4041NX
228.42 KB
6.2 a npn low vcesat (biss) transistor.
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PBSS4041NX
60 V, 6.2 A NPN low VCEsat (BISS) transistor
Rev. 01
* 1 April 2010 Product data sheet
1. Product profile
1.1.
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