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PBSS4560PA 6A NPN Transistor

PBSS4560PA Description

PBSS4560PA 60 V, 6 A NPN low VCEsat (BISS) transistor Rev.1 * 19 May 2010 Product data sheet 1.Product profile 1.1 General .
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plast.

PBSS4560PA Features

* Low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
* Exposed heat sink for excellent thermal and electrical conductivity
* Leadl

PBSS4560PA Applications

* Loadswitch
* Battery-driven devices
* Power management
* Charging circuits
* Power switches (e. g. motors, fans) 1.4 Quick reference data Table 1. Symbol VCEO IC ICM Quick reference data Parameter collector-emitter voltage collector current peak collector

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