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PBSS4580PA 5.6 A NPN low VCEsat (BISS) transistor

PBSS4580PA Description

www.DataSheet4U.com PBSS4580PA 80 V, 5.6 A NPN low VCEsat (BISS) transistor Rev.01 * 15 April 2010 Product data sheet 1.Product profile 1..
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plast.

PBSS4580PA Features

* Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM Smaller required Printed-Circuit Board (PCB) area than for conventional transistors Exposed heat sink for excellent thermal and electrical conductivity Leadl

PBSS4580PA Applications

* Loadswitch Battery-driven devices Power management Charging circuits Power switches (e. g. motors, fans) 1.4 Quick reference data Table 1. Symbol VCEO IC ICM RCEsat [1] Quick reference data Parameter collector-emitter voltage collector current peak

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5.6 NPN low VCEsat BISS transistor NXP
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