* Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM Smaller required Printed-Circuit Board (PCB) area than for conventional transistors Exposed heat sink for excellent thermal and electrical conductivity Leadl
PBSS4580PA Datasheet (202.15 KB)
PBSS4580PA
202.15 KB
5.6 a npn low vcesat (biss) transistor.
www.DataSheet4U.com PBSS4580PA 80 V, 5.6 A NPN low VCEsat (BISS) transistor Rev. 01 15 April 2010 Product data sheet 1. Product profile 1..
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