* Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM Smaller required Printed-Circuit Board (PCB) area than for conventional transistors Exposed heat sink for excellent thermal and electrical conductivity Leadl
PBSS4612PA Datasheet (200.61 KB)
PBSS4612PA
200.61 KB
6 a npn low vcesat (biss) transistor.
www.DataSheet4U.com PBSS4612PA 12 V, 6 A NPN low VCEsat (BISS) transistor Rev. 01 7 May 2010 Product data sheet 1. Product profile 1.1 Gen.
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