PBSS5250T Datasheet - NXP

PBSS5250T PNP low VCEsat (BISS) transistor

PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX. *50 *2 *3 150 UNIT V A A mΩ 3 3 1 DESCRIPTION PNP BISS transistor in a SOT23 plastic package offering ultra low VCEsat and RCEsat parameters. MARKING TYPE NUMBER .

PBSS5250T Features

* Low collector-emitter saturation voltage VCEsat

* High collector current capability: IC and ICM

* Higher efficiency leading to less heat generation

* Reduced printed-circuit board requirements

* Cost effective alternative to MOSFETs in specific applications.

PBSS5250T_PhilipsSemiconductors.pdf