PBSS5250T PNP low VCEsat (BISS) transistor

NXP

Description

www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET ge M3D088 PBSS5250T 50 V, 2 A PNP low VCEsat (BISS) transistor Product speciﬁcation 2003 Oc.
PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX. 50. 2. 3 150.

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Datasheet Specifications

Part number: PBSS5250T
Manufacturer: NXP ↗
File Size: 75.70 KB
Datasheet: PBSS5250T_PhilipsSemiconductors.pdf
Description: PNP low VCEsat (BISS) transistor

Features

* Low collector-emitter saturation voltage VCEsat
* High collector current capability: IC and ICM
* Higher efficiency leading to less heat generation
* Reduced printed-circuit board requirements

Applications

* APPLICATIONS
* Power management
* DC/DC converters
* Supply line switching
* Battery charger
* LCD backlighting
* Peripheral drivers
* Driver in low supply voltage applications (e. g. lamps and LEDs)
* Inductive load driver (e. g. relays

PBSS5250T Distributors

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PBSS5250T PNP low VCEsat BISS transistor NXP

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