PBSS5320T Datasheet (NXP) - PNP transistor

PBSS5320T, PNP transistor

PNP low VCEsat transistor in a SOT23 plastic package.

NPN complement: PBSS4320T.

MARKING TYPE NUMBER PBSS5320T MARKING CODE(1) ZH∗ Note 1.

∗ = p: Made in Hong Kong.

∗ = t: Made in Malaysia.

∗ = W: Made in China.

QUICK REFERENCE DATA SYMBOL PARAMETER VCEO IC ICRP collector-emitter voltage co

PBSS5320T Features

* Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat

* High collector current capability

* High collector current gain

* Improved efficiency due to reduced heat generation. APPLICATIONS

* Power management applications

* Low a