PBSS5320T Datasheet - NXP

PBSS5320T PNP transistor

PNP low VCEsat transistor in a SOT23 plastic package. NPN complement: PBSS4320T. MARKING TYPE NUMBER PBSS5320T MARKING CODE(1) ZH∗ Note 1. ∗ = p: Made in Hong Kong. ∗ = t: Made in Malaysia. ∗ = W: Made in China. QUICK REFERENCE DATA SYMBOL PARAMETER VCEO IC ICRP collector-emitter voltage co.

PBSS5320T Features

* Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat

* High collector current capability

* High collector current gain

* Improved efficiency due to reduced heat generation. APPLICATIONS

* Power management applications

* Low a

PBSS5320T-NXP.pdf