PBSS5320T Datasheet - NXP

PNP transistor

PBSS5320T Features

* Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat

* High collector current capability

* High collector current gain

* Improved efficiency due to reduced heat generation. APPLICATIONS

* Power management applications

* Low a

PBSS5320T General Description

PNP low VCEsat transistor in a SOT23 plastic package. NPN complement: PBSS4320T. MARKING TYPE NUMBER PBSS5320T MARKING CODE(1) ZH∗ Note 1. ∗ = p: Made in Hong Kong. ∗ = t: Made in Malaysia. ∗ = W: Made in China. QUICK REFERENCE DATA SYMBOL PARAMETER VCEO IC ICRP collector-emitter voltage co.

PBSS5320T Datasheet (94.47 KB)

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Datasheet Details

Part number:

PBSS5320T

Manufacturer:

NXP ↗

File Size:

94.47 KB

Description:

Pnp transistor.
DISCRETE SEMICONDUCTORS DATA SHEET PBSS5320T 20 V, 3 A PNP low VCEsat (BISS) transistor Product data sheet Supersedes data of 2002 Aug 08 2004 Jan .

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PBSS5320T PNP transistor NXP

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PBSS5320T Features

PBSS5320T General Description

Datasheet Details

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