PBSS5350D PNP transistor

NXP

Description

SOT457 PBSS5350D 50 V, 3 A PNP low VCEsat (BISS) transistor Rev.6 * 28 June 2011 Product data sheet 1.Product profile 1.1 General descri.
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.

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Datasheet Specifications

Part number: PBSS5350D
Manufacturer: NXP ↗
File Size: 160.55 KB
Datasheet: PBSS5350D_PhilipsSemiconductors.pdf
Description: PNP transistor

Features

* Low collector-emitter saturation voltage VCEsat
* High current capability
* High efficiency due to less heat generation
* AEC-Q101 qualified

Applications

* Supply line switching circuits
* Battery management applications
* DC-to-DC conversion 1.4 Quick reference data Table 1. Symbol VCEO IC ICM RCEsat Quick reference data Parameter collector-emitter voltage collector current peak collector current collector-emitter saturation resistan

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PBSS5350D PNP transistor NXP

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