PBSS5350SS PNP/PNP low VCEsat (BISS) transistor

NXP

Description

PBSS5350SS 50 V, 2.7 A PNP/PNP low VCEsat (BISS) transistor Rev.01 * 3 April 2007 Product data sheet 1.Product proﬁle 1.1 General descripti.
PNP/PNP double low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted Device (SMD) plastic package.

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Datasheet Specifications

Part number: PBSS5350SS
Manufacturer: NXP ↗
File Size: 141.57 KB
Datasheet: PBSS5350SS_PhilipsSemiconductors.pdf
Description: PNP/PNP low VCEsat (BISS) transistor

Features

* I I I I I www. DataSheet4U. com Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efﬁciency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3

Applications

* I Dual low power switches (e. g. motors, fans) I Automotive 1.4 Quick reference data Table 2. Quick reference data Conditions open base single pulse; tp ≤ 1 ms IC =
* 2 A; IB =
* 200 mA [1] Symbol Parameter Per transistor VCEO IC ICM RCEsat [1] Min - Typ 95 Max
* 50

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PBSS5350SS PNP PNP low VCEsat BISS transistor NXP

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