* I I I I I www.DataSheet4U.com Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3
PBSS5350SS Datasheet (141.57 KB)
PBSS5350SS
141.57 KB
Pnp/pnp low vcesat (biss) transistor.
PBSS5350SS
50 V, 2.7 A PNP/PNP low VCEsat (BISS) transistor
Rev. 01
* 3 April 2007 Product data sheet
1. Product profile
1.1 General descripti.
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