* High power dissipation (830 mW)
* Ultra low collector-emitter saturation voltage
* 3 A continuous current
* High current switching
* Improved device reliability due to reduced heat generation APPLICATIONS
* Medium power switching and muting
PBSS5350S Datasheet (72.68 KB)
PBSS5350S
72.68 KB
50 v low vcesat pnp transistor.
DISCRETE SEMICONDUCTORS
DATA SHEET
alfpage
M3D186
PBSS5350S 50 V low VCEsat PNP transistor
Product specification 2001 Nov 19
Philips Semiconductors.
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