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PBSS5330PA PNP transistor

PBSS5330PA Description

PBSS5330PA 30 V, 3 A PNP low VCEsat (BISS) transistor 7 April 2015 Product data sheet 1.General .
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plast.

PBSS5330PA Features

* Low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
* Exposed heat sink for excellent thermal and electrical conductivity
* Leadl

PBSS5330PA Applications

* Loadswitch
* Battery-driven devices
* Power management
* Charging circuits
* Power switches (e. g. motors, fans) 4. Quick reference data Table 1. Symbol VCEO IC ICM RCEsat Quick reference data Parameter Conditions collector-emitter voltage open base co

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