PBSS5330PAS 3A PNP low VCEsat (BISS) transistor

NXP

Description

DF N2 020 D-3 PBSS5330PAS 11 September 2014 30 V, 3 A PNP low VCEsat (BISS) transistor Product data sheet 1.General .
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Devi.

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Datasheet Specifications

Part number: PBSS5330PAS
Manufacturer: NXP ↗
File Size: 246.38 KB
Datasheet: PBSS5330PAS-NXP.pdf
Description: 3A PNP low VCEsat (BISS) transistor

Features

* Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation High temperature a

Applications

* up to 175 °C Reduced Printed-Circuit Board (PCB) area requirements Leadless small SMD plastic package with soldarable side pads Exposed heat sink for excellent thermal and electrical conductivity Suitable for Automatic Optical Inspection (AOI) of solder joint AEC-Q101 qualified 3. Applications

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PNP low VCEsat BISS transistor NXP

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