Datasheet Details
- Part number
- PBSS5330PA
- Manufacturer
- NXP ↗
- File Size
- 214.30 KB
- Datasheet
- PBSS5330PA_PhilipsSemiconductors.pdf
- Description
- 3A PNP low VCEsat (BISS) transistor
PBSS5330PA Description
HUSON3 PBSS5330PA 30 V, 3 A PNP low VCEsat (BISS) transistor 7 April 2015 Product data sheet 1.General .
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plast.
PBSS5330PA Features
* Low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
* Exposed heat sink for excellent thermal and electrical conductivity
* Leadl
PBSS5330PA Applications
* Loadswitch
* Battery-driven devices
* Power management
* Charging circuits
* Power switches (e. g. motors, fans)
4. Quick reference data
Table 1. Symbol VCEO
IC ICM RCEsat
Quick reference data Parameter
Conditions
collector-emitter voltage
open base
co
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