PBSS5350T 50 V/ 3 A PNP low VCEsat (BISS) transistor

NXP

Description

DISCRETE SEMICONDUCTORS DATA SHEET PBSS5350T 50 V, 3 A PNP low VCEsat (BISS) transistor Product speciﬁcation Supersedes data of 2002 Aug 08 2004 Jan.
PNP low VCEsat transistor in a SOT23 plastic package. = p: Made in Hong Kong.

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Datasheet Specifications

Part number: PBSS5350T
Manufacturer: NXP ↗
File Size: 86.21 KB
Datasheet: PBSS5350T_PhilipsSemiconductors.pdf
Description: 50 V/ 3 A PNP low VCEsat (BISS) transistor

Features

* Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat
* High collector current capability
* High collector current gain

Applications

* Power management applications
* Low and medium power DC/DC convertors
* Supply line switching
* Battery chargers

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PBSS5350T PNP low VCEsat BISS transistor NXP

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