Datasheet Details
Part number:
PBSS5350T
Manufacturer:
File Size:
86.21 KB
Description:
50 V/ 3 A PNP low VCEsat (BISS) transistor
Features
* Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat
* High collector current capability
* High collector current gain
* Improved efficiency due to reduced heat generation. APPLICATIONS
* Power management applications
* Low an
PBSS5350T_PhilipsSemiconductors.pdf
PBSS5350T, 50 V/ 3 A PNP low VCEsat (BISS) transistor
PNP low VCEsat transistor in a SOT23 plastic package.
NPN complement: PBSS4350T.
MARKING TYPE NUMBER PBSS5350T Note 1.
* = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
ORDERING INFORMATION PACKAGE TYPENUMBER NAME PBSS5350T * DESCRIPTION plastic surface mou
PBSS5350T Distributor
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