PBSS5350T Datasheet - NXP

PBSS5350T 50 V/ 3 A PNP low VCEsat (BISS) transistor

PNP low VCEsat transistor in a SOT23 plastic package. NPN complement: PBSS4350T. MARKING TYPE NUMBER PBSS5350T Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. ORDERING INFORMATION PACKAGE TYPENUMBER NAME PBSS5350T * DESCRIPTION plastic surface mou.

PBSS5350T Features

* Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat

* High collector current capability

* High collector current gain

* Improved efficiency due to reduced heat generation. APPLICATIONS

* Power management applications

* Low an

PBSS5350T_PhilipsSemiconductors.pdf