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PDTC114EEF

NPN resistor-equipped transistor

PDTC114EEF Features

* Power dissipation comparable to SOT23

* Built-in bias resistors R1 and R2 (typ. 10 kΩ each)

* Simplification of circuit design

* Reduces number of components and board space. APPLICATIONS

* Especially suitable for space reduction in interface and driver circ

PDTC114EEF General Description

NPN resistor-equipped transistor encapsulated in an ultra small plastic SMD SC-89 (SOT490) package. PNP complement: PDTA114EEF. PINNING PIN 1 2 3 DESCRIPTION base/input emitter/ground collector/output 1 2 MGA893 - 1 PDTC114EEF handbook, halfpage 3 R1 1 R2 3 1 Top view 2 MAM412 2 Fig.1 Simpli.

PDTC114EEF Datasheet (49.67 KB)

Preview of PDTC114EEF PDF

Datasheet Details

Part number:

PDTC114EEF

Manufacturer:

NXP ↗

File Size:

49.67 KB

Description:

Npn resistor-equipped transistor.
DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTC114EEF NPN resistor-equipped transistor Product specification Supersedes data of 1998 Nov 11 1999 May .

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PDTC114EEF NPN resistor-equipped transistor NXP

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