PDTC114ES Datasheet - NXP

NPN resistor-equipped transistor

PDTC114ES Features

* Built-in bias resistors R1 and R2 (typ. 10 kΩ each)

* Simplification of circuit design

* Reduces number of components and board space. APPLICATIONS

* Especially suitable for space reduction in interface and driver circuits

* Inverter circuit configurations w

PDTC114ES General Description

NPN resistor-equipped transistor in a TO-92; SOT54 plastic package. PNP complement: PDTA114ES. 1 2 3 MGL136 MAM364 PDTC114ES handbook, halfpage 2 R1 1 R2 3 1 2 3 Fig.1 Simplified outline (TO-92; SOT54) and symbol. PINNING PIN 1 2 3 DESCRIPTION base/input collector/output emitter/ground Fig.2 .

PDTC114ES Datasheet (67.06 KB)

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Datasheet Details

Part number:

PDTC114ES

Manufacturer:

NXP ↗

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67.06 KB

Description:

Npn resistor-equipped transistor.
DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC114ES NPN resistor-equipped transistor Product speciﬁcation Supersedes data of 1998 May 18 1998 Nov 2.

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PDTC114ES NPN resistor-equipped transistor NXP

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PDTC114ES Features

PDTC114ES General Description

Datasheet Details

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