PESD5V0L5UV - Low capacitance 5-fold ESD protection diode arrays

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NXP

PESD5V0L5UV Low capacitance 5-fold ESD protection diode arrays by NXP - Datasheet Preview — Datasheet preview – PESD5V0L5UV

Datasheet Details

Part number	PESD5V0L5UV
Manufacturer	NXP
File Size	120.52 KB
Description	Low capacitance 5-fold ESD protection diode arrays
Datasheet	PESD5V0L5UV Datasheet
Additional preview pages of the PESD5V0L5UV datasheet.

Product details

Description

common anode cathode 2 cathode 3 cathode 4 cathode 5 DESCRIPTION Low capacitance 5-fold ESD protection array in the ultra small SOT666 plastic package designed to protect up to five transmission or data lines from the damage caused by Electrostatic Discharge (ESD).MARKING TYPE NUMBER PESD3V3L5UV PESD5V0L5UV Note 1. = p: Made in Hong Kong. = t: Made in Malaysia. = W: Made in China. DESCRI

Features

Uni-directional ESD protection of up to five lines.
Bi-directional ESD protection of up to four lines.
Low diode capacitance.
Maximum peak pulse power: Ppp = 25 W at tp = 8/20µs.
Low clamping voltage: VCL(R) = 12 V at Ipp = 2.5 A.
Ultra low leakage current: IRM = 8 nA at VRWM = 5 V.
ESD protection > 20 kV.
IEC 61000-4-2; level 4 (ESD).
IEC 61000-4-5 (surge); Ipp = 2.5 A at Tp = 8/20 µs.

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Published: Jun 20, 2007 |