PHD11N03LT

N-Channel MOSFET

NXP

PHD11N03LT Features

* ’Trench’ technology

* Low on-state resistance

* Fast switching

* Logic level compatible g PHB11N03LT, PHD11N03LT SYMBOL d QUICK REFERENCE DATA VDSS = 30 V ID = 10.5 A RDS(ON) ≤ 150 mΩ (VGS = 5 V) RDS(ON) ≤ 130 mΩ (VGS = 10 V) s GENERAL DESCRIPTION N-channel enha

PHD11N03LT General Description

N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. Applications:

* d.c. to d.c. converters

* switched mode power supplies The PHB11N03LT is supplied in the SOT404 (D2PAK) surface mounting package. The PHD11N03LT is s.

PHD11N03LT Datasheet (105.13 KB)