PHD12N10E Transistor

NXP

Description

Philips Semiconductors Product Specification PowerMOS transistor PHD12N10E GENERAL .
N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting.

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Datasheet Specifications

Part number: PHD12N10E
Manufacturer: NXP ↗
File Size: 79.17 KB
Datasheet: PHD12N10E_PhilipsSemiconductors.pdf
Description: Transistor

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PHD12N10E Transistor NXP

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