PHD12NQ15T

N-Channel Transistor

NXP

PHD12NQ15T Features

* ’Trench’ technology

* Low on-state resistance

* Fast switching

* Low thermal resistance SYMBOL VDSS = 150 V ID = 12.5 A g RDS(ON) ≤ 200 mΩ s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technol

PHD12NQ15T General Description

N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP12NQ15T is supplied in the SOT78 (TO220AB) conventio.

PHD12NQ15T Datasheet (111.85 KB)