PHD11N06LT Transistor

NXP

Description

Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET .
N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology.

📥 Download Datasheet

PHD11N06LT Datasheet Preview — Preview of PHD11N06LT PDF

Datasheet Specifications

Part number: PHD11N06LT
Manufacturer: NXP ↗
File Size: 76.41 KB
Datasheet: PHD11N06LT_PhilipsSemiconductors.pdf
Description: Transistor

Features

* ’Trench’ technology
* Very low on-state resistance
* Fast switching
* Stable off-state characteristics
* High thermal cycling performance
* Low thermal resistance PHB11N06LT, PHD11N06LT SYMBOL d QUICK REFERENCE DATA VDSS = 55 V ID = 11 A g s RDS(

PHD11N06LT Distributors

📁 Related Datasheet

PHD13003C PHD16N03LT PHD16N03T PHD20N06T PHD22NQ20T PHD44N06LT

📌 All Tags

PHD11N06LT Transistor NXP

NXP PHD11N06LT-like datasheet