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PHD11N06LT

Transistor

PHD11N06LT Features

* ’Trench’ technology

* Very low on-state resistance

* Fast switching

* Stable off-state characteristics

* High thermal cycling performance

* Low thermal resistance PHB11N06LT, PHD11N06LT SYMBOL d QUICK REFERENCE DATA VDSS = 55 V ID = 11 A g s RDS(

PHD11N06LT General Description

N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHB11N06LT is supplied in the SOT404 surf.

PHD11N06LT Datasheet (76.41 KB)

Preview of PHD11N06LT PDF

Datasheet Details

Part number:

PHD11N06LT

Manufacturer:

NXP ↗

File Size:

76.41 KB

Description:

Transistor.

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PHD11N06LT Transistor NXP

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