PHT11N06T TrenchMOS transistor Standard level FET

NXP

Description

Philips Semiconductors Product specification TrenchMOS™ transistor Standard level FET GENERAL .
N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting.

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Datasheet Specifications

Part number: PHT11N06T
Manufacturer: NXP ↗
File Size: 75.35 KB
Datasheet: PHT11N06T_PhilipsSemiconductors.pdf
Description: TrenchMOS transistor Standard level FET

Applications

* PHT11N06T QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Tsp = 25 ˚C Drain current (DC) Tamb = 25 ˚C Total power dissipation Junction temperature Drain-source on-state resistance VGS = 10 V MAX. 55 10.7 4.9 8.3 150 40 UNIT V A A W ˚C mΩ PINNI

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PHT11N06T TrenchMOS transistor Standard level FET NXP

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