PHT1N52S PowerMOS transistor

NXP

Description

Philips Semiconductors Objective specification PowerMOS transistor PHT1N52S GENERAL .
N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capabilit.

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Datasheet Specifications

Part number: PHT1N52S
Manufacturer: NXP ↗
File Size: 27.59 KB
Datasheet: PHT1N52S_PhilipsSemiconductors.pdf
Description: PowerMOS transistor

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PowerMOS transistor NXP

NXP PHT1N52S-like datasheet