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BUK6607-75C - N-channel TrenchMOS FET

BUK6607-75C Description

BUK6607-75C N-channel TrenchMOS FET Rev.2 * 17 November 2010 Product data sheet 1.Product profile 1.1 General .
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology.

BUK6607-75C Features

* AEC Q101 compliant
* Suitable for intermediate level gate drive sources

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N-channel TrenchMOS FET NXP Semiconductors
NXP Semiconductors BUK6607-75C-like datasheet