Datasheet Details
- Part number
- BUK662R7-55C
- Manufacturer
- NXP ↗ Semiconductors
- File Size
- 180.62 KB
- Datasheet
- BUK662R7-55C-NXPSemiconductors.pdf
- Description
- N-Channel MOSFET
BUK662R7-55C Description
BUK662R7-55C N-channel TrenchMOS intermediate level FET Rev.01 * 7 September 2010 Product data sheet 1.Product profile 1.1 General descript.
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology.
BUK662R7-55C Features
* AEC Q101 compliant
* Suitable for intermediate level gate drive sources
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