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BUK969E3R2-40B, BUK959E3R2-40B TrenchMOS logic level FET

BUK969E3R2-40B Description

BUK95/96/9E3R2-40B TrenchMOS™ logic level FET Rev.04 * 14 November 2003 Product data 1.Product profile 1.1 .
N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology.

BUK969E3R2-40B Applications

* s Automotive systems s Motors, lamps and solenoids s 12 V loads s General purpose power switching. 1.4 Quick reference data s EDS(AL)S ≤ 1.2 J s ID ≤ 100 A s RDSon = 2.7 mΩ (typ) s Ptot ≤ 300 W. 2. Pinning information Table 1: Pin 1 2 3 mb Pinning - SOT78, SOT404, and SOT226 simplified outlines and

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This datasheet PDF includes multiple part numbers: BUK969E3R2-40B, BUK959E3R2-40B. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
BUK969E3R2-40B, BUK959E3R2-40B
Manufacturer
NXP ↗ Semiconductors
File Size
331.43 KB
Datasheet
BUK959E3R2-40B-NXPSemiconductors.pdf
Description
TrenchMOS logic level FET
Note
This datasheet PDF includes multiple part numbers: BUK969E3R2-40B, BUK959E3R2-40B.
Please refer to the document for exact specifications by model.

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TrenchMOS logic level FET NXP Semiconductors
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