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BUK9607-30B - (BUK9x07-30B) TrenchMOS logic level FET

This page provides the datasheet information for the BUK9607-30B, a member of the BUK9507-30B (BUK9x07-30B) TrenchMOS logic level FET family.

Datasheet Summary

Description

N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology.

Product availability: BUK9507-30B in SOT78 (TO-220AB) BUK9607-30B in SOT404 (D2-PAK).

Features

  • s Low on-state resistance s 175 °C rated s Q101 compliant s Logic level compatible. 1.3.

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Datasheet preview – BUK9607-30B

Datasheet Details

Part number BUK9607-30B
Manufacturer NXP
File Size 323.20 KB
Description (BUK9x07-30B) TrenchMOS logic level FET
Datasheet download datasheet BUK9607-30B Datasheet
Additional preview pages of the BUK9607-30B datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com BUK95/9607-30B TrenchMOS™ logic level FET Rev. 01 — 25 April 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology. Product availability: BUK9507-30B in SOT78 (TO-220AB) BUK9607-30B in SOT404 (D2-PAK). 1.2 Features s Low on-state resistance s 175 °C rated s Q101 compliant s Logic level compatible. 1.3 Applications s Automotive systems s Motors, lamps and solenoids s 12 V loads s General purpose power switching. 1.4 Quick reference data s EDS(AL)S ≤ 327 mJ s ID ≤ 75 A s RDSon = 5.9 mΩ (typ) s Ptot ≤ 157 W. 2.
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